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Oblique-incidence infrared reflection in thin ZnO films deposited on sapphire by gas-source MBE
http://hdl.handle.net/2298/9654
http://hdl.handle.net/2298/965499acbd4b-9ba6-4450-8401-1af845c74241
名前 / ファイル | ライセンス | アクション |
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AIP CP_893_317.pdf (177.1 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-10-29 | |||||
タイトル | ||||||
タイトル | Oblique-incidence infrared reflection in thin ZnO films deposited on sapphire by gas-source MBE | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | ZnO, thin film, 薄膜結晶, oblique-incidence infrared reflection, 斜入射赤外反射, LO phonon-plasmon coupled mode, LO音子~プラズモン結合モード, electron concentration, 電子密度, crystal quality, 結晶品位 | |||||
資源タイプ | ||||||
資源タイプ | journal article | |||||
著者 |
Kumagai, Yuji
× Kumagai, Yuji× Himoto, Takeshi× Tampo, Hitoshi× Yokoi, Hiroyuki× Shibata, Hajime× Niki, Shigeru× Kuroda, Noritaka |
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別言語の著者 |
熊谷, 雄児
× 熊谷, 雄児× 日元, 武史× 反保, 衆志× 横井, 裕之× 柴田, 肇× 仁木, 栄× 黒田, 規敬 |
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内容記述 | ||||||
内容記述 | Properties of polar optical phonons in n-ZnO thin films are investigated by infrared reflection spectroscopy. Although there exist degenerate electrons in the concentration of 5×1018 cm−3 in the buffer layer, observation of the A1(LO) phonon-plasmon coupled mode permits us to evaluate the electron concentration in the films grown on the buffer layer. The electron concentration is found to attain to 7×1016 cm−3 in undoped, 500-nm-thick films, while the damping energy of the E1(LO) mode remains to be as large as 45 cm−1 in those thin films. | |||||
内容記述 | ||||||
内容記述 | 近い将来の紫外光LEDやオゾンセンサーなどの素材として嘱目されているZnOの薄膜結晶に、斜入射赤外反射法を初めて適用して結晶品位を評価した。それらのデバイスに必要な、厚さ500ナノメートルという極薄膜結晶を分子線エピタキシー法によってサファイア基板のa面に堆積させて試料とした。実験ではZnOのA1(LO)音子とプラズモンの結合したモードを明瞭に観測することができ、これより、バッファー層中の高密度の電子と弁別して、薄膜結晶内の電子密度を種々の試料について評価することができた。また、E1(LO)音子のダンピングエネルギーより、結晶格子の歪みについても知見が得られた。 | |||||
書誌情報 |
AIP Conference Proceedings 巻 893, p. 317-318, 発行年 2007-04-10 |
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ISSN | ||||||
収録物識別子 | 0094243X | |||||
書誌レコードID | ||||||
収録物識別子 | AA00502977 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
関連識別子 | 10.1063/1.2729895 | |||||
権利 | ||||||
権利情報 | ©2007 American Institute of Physics | |||||
フォーマット | ||||||
内容記述 | application/pdf | |||||
形態 | ||||||
177051 bytes | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
日本十進分類法 | ||||||
主題 | 549.8 | |||||
その他の言語のタイトル | ||||||
その他のタイトル | ガス式分子線エピタキシー法によってサファイア基板に堆積させたZnO薄膜結晶の斜入射赤外反射 | |||||
タイトル(ヨミ) | ||||||
その他のタイトル | ガスシキ ブンシ エピタキシーホウ ニ ヨッテ サファイア キバン ニ タイセキ サセタ ZnO ハクマク ケッショウ ノ シャニュウシャ セキガイ ハンシャ | |||||
出版者 | ||||||
出版者 | American Institute of Physics | |||||
資源タイプ | ||||||
内容記述 | 論文(Article) | |||||
資源タイプ・ローカル | ||||||
雑誌掲載論文 | ||||||
資源タイプ・NII | ||||||
Journal Article | ||||||
資源タイプ・DCMI | ||||||
text | ||||||
資源タイプ・ローカル表示コード | ||||||
01 | ||||||
URL | ||||||
内容記述 | http://link.aip.org/link/?APCPCS/893/317/1 | |||||
コメント | ||||||
黒田規敬: 熊本大学大学院自然科学研究科マテリアル工学講座・工学部マテリアル工学科 |