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GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique
http://hdl.handle.net/2298/00044023
http://hdl.handle.net/2298/00044023de9dddc5-0f69-4ca6-99ef-aebee8ff1f43
名前 / ファイル | ライセンス | アクション |
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Low_2021_Appl._Phys._Express_14_031004.pdf (1.2 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2021-10-06 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ | journal article | |||||
著者 |
Low, Rui Shan
× Low, Rui Shan× Joel T., Asubar× Baratov, Ali× Kamiya, Shunsuke× Nagase, Itsuki× Urano, Shun× Kawabata, Shinsaku× Tokuda, Hirokuni× Kuzuhara, Masaaki× Nakamura, Yusui× Naito, Kenta× Motoyama, Tomohiro× Zenji, Yatabe |
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内容記述 | ||||||
内容記述 | We report on the fabrication and characterization of AlGaN/GaN metal-insulator-semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a 5 nm thick Al2O3 dielectric deposited by cost-effective and environmental-friendly mist chemical vapor deposition (mist-CVD) technique. Practically hysteresis-free capacitance–voltage profiles were obtained from the fabricated two-terminal MIS-capacitors indicating high quality of the mist-Al2O3/AlGaN interface. Compared with reference Schottky-gate HEMTs, mist MIS-HEMTs exhibited much improved performance including higher drain current on-to-off ratio, much lower gate leakage current in both forward and reverse directions and lower subthreshold swing. These results demonstrate the potential and viability of non-vacuum mist-CVD Al2O3 in the development of high-performance GaN-based MIS-HEMTs. | |||||
書誌情報 |
en : Applied Physics Express 巻 14, 号 3, p. 031004, 発行年 2021-02-16 |
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ISSN | ||||||
収録物識別子 | 1882-0778 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
関連識別子 | https://doi.org/10.35848/1882-0786/abe19e | |||||
権利 | ||||||
権利情報 | © 2021 The Japan Society of Applied Physics | |||||
権利 | ||||||
権利情報 | Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
日本十進分類法 | ||||||
主題 | 501 | |||||
出版者 | ||||||
言語 | en | |||||
出版者 | IOP Publishing |