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Lattice-dynamical and photoelastic properties of GaSe under high pressure studied by Raman scattering and electronic susceptibility
http://hdl.handle.net/2298/9611
http://hdl.handle.net/2298/9611a6bd224e-76f3-40f4-99b8-d7c0ada58861
名前 / ファイル | ライセンス | アクション |
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PRB_035_3860.pdf (1.1 MB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-10-22 | |||||
タイトル | ||||||
タイトル | Lattice-dynamical and photoelastic properties of GaSe under high pressure studied by Raman scattering and electronic susceptibility | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | GaSe, Raman scattering, ラマン散乱, infrared, 赤外, hydrostatic pressure, 静水圧, Born effective charge, ボルン有効電荷, Grüneisen parameter, グリュナイゼンパラメータ, dimensionality, 次元性 | |||||
資源タイプ | ||||||
資源タイプ | journal article | |||||
著者 |
Kuroda, Noritaka
× Kuroda, Noritaka× 上野, 修× 仁科, 雄一郎 |
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別言語の著者 |
黒田, 規敬
× 黒田, 規敬× 上野, 修× 仁科, 雄一郎 |
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内容記述 | ||||||
内容記述 | Raman scattering and infrared studies are reported for the layer compound GaSe under hydrostatic pressures up to 4 GPa. The rigid-layer mode shifts towards higher frequencies with an initial pressure coefficient of 0.234 GPa-1. The overall behavior is explained in terms of the volume anharmonicity characteristic of the van der Waals bonding. The internal bond-bending mode softens and the Born effective charge decreases linearly. By adopting the single-layer compressibility κl≃0.015 GPa-1 we obtain a Grüneisen parameter of -1.9 for the bond-bending mode and -0.55±0.05 for the effective charge, comparable to those of a tetrahedral semiconductor. Coexistence of such molecular and covalent characters leads to a nonlinear shift of the energy, Eg, of the Penn-Phillips oscillator. This behavior is shown to be described well by ΔEg=Da(Δa/a0) +Dc(Δc/c0) with the deformation potentials Da=-7.6±1.0 eV for the a axis and Dc=1.06±0.16 eV for the c axis. These deformation potentials reflect the dimensionality of bonding network as well as the nature of the electronic structure. | |||||
内容記述 | ||||||
内容記述 | 層状半導体の代表的な物質の1つとしてこれまで多くの関心を集めてきたGaSeについて、2次元的な化学結合の成り立ちと電子構造との関係を実験的に調べるために、ダイヤモンドアンビルセルを用いてラマン散乱スペクトルと光学屈折率の静水圧依存性を詳細に測定した。この実験によりGa-Se結合の有効電荷とs、p 価電子の結合-反結合エネルギーギャップの光学的平均値を定量評価することができ、それらの圧力係数を通して、化学結合ネットワークの2次元性についての描像が得られた。 | |||||
書誌情報 |
Physical Review B 巻 35, 号 8, p. 3860-3870, 発行年 1987-03-15 |
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ISSN | ||||||
収録物識別子 | 01631829 | |||||
書誌レコードID | ||||||
収録物識別子 | AA00362255 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
関連識別子 | 10.1103/PhysRevB.35.3860 | |||||
権利 | ||||||
権利情報 | ©1987 The American Physical Society | |||||
フォーマット | ||||||
内容記述 | application/pdf | |||||
形態 | ||||||
1068907 bytes | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
日本十進分類法 | ||||||
主題 | 459.93 | |||||
その他の言語のタイトル | ||||||
その他のタイトル | 高圧下でのGaSeの格子力学および光弾性特性に関するラマン散乱と電子感受率による研究 | |||||
タイトル(ヨミ) | ||||||
その他のタイトル | コウアツカ デノ GaSe ノ コウシ リキガク オヨビ コウダンセイ トクセイ ニ カンスル ラマン サンラン ト デンシ カンジュリツ ニ ヨル ケンキュウ | |||||
出版者 | ||||||
出版者 | The American Physical Society | |||||
資源タイプ | ||||||
内容記述 | 論文(Article) | |||||
資源タイプ・ローカル | ||||||
雑誌掲載論文 | ||||||
資源タイプ・NII | ||||||
Journal Article | ||||||
資源タイプ・DCMI | ||||||
text | ||||||
資源タイプ・ローカル表示コード | ||||||
01 | ||||||
URL | ||||||
内容記述 | http://link.aps.org/abstract/PRB/v35/p3860 | |||||
コメント | ||||||
黒田規敬: 熊本大学大学院自然科学研究科マテリアル工学講座・工学部マテリアル工学科 |