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Infrared characterization of GaN films grown on sapphire by MOCVD
http://hdl.handle.net/2298/9653
http://hdl.handle.net/2298/96534922420b-00b6-49b6-89d5-82e1d67ec6c5
名前 / ファイル | ライセンス | アクション |
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AIP CP_772_281.pdf (165.0 kB)
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Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2008-10-29 | |||||
タイトル | ||||||
タイトル | Infrared characterization of GaN films grown on sapphire by MOCVD | |||||
言語 | ||||||
言語 | eng | |||||
キーワード | ||||||
主題 | GaN, film, 薄膜, blue LED, 青色発光ダイオード, infrared characterization, 赤外評価, reststrahlen, 残留線, oblique incidence reflection, 斜入射反射, attenuated total reflection, 減衰全反射, lattice strain, 格子歪み, crystal quality, 結晶品位 | |||||
資源タイプ | ||||||
資源タイプ | journal article | |||||
著者 |
Kuroda, Noritaka
× Kuroda, Noritaka× Saiki, Kazuya× ハサヌディン,× 渡邉, 純二× Cho, Meoungwham |
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別言語の著者 |
黒田, 規敬
× 黒田, 規敬× 佐伯, 和也× 渡邉, 純二× 曺, 明煥× 曹, 明煥 |
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内容記述 | ||||||
内容記述 | Reststrahlen reflection and attenuated total reflection due to the surface phonon-polariton waves have been measured for 2 µm-thick films of n-GaN deposited on the (0001) surface of sapphire. It has emerged that the lattice of the top 1 µm-thick portion has a high quality while a large strain remains in the inner half of the films. | |||||
内容記述 | ||||||
内容記述 | 半導体薄膜内部の結晶品位を非破壊・非接触で評価する技術の開発を目的として、斜入射赤外反射の手法を青色発光ダイオードのためのn-GaN膜に適用し、併せて赤外減衰全反射により結果を検証した。試料には金属有機化学気相堆積法でサファイアの(0001)面上に2 ミクロンの厚さに堆積させた薄膜を用いた。得られた赤外フォノン残留線と表面フォノン波のスペクトルより、膜の上部1 ミクロンは良好な結晶品位を有するが下部の1 ミクロンにはサファイア基板との格子定数差による大きな歪みが残存していることが観測された。これにより、斜入射赤外反射が半導体極薄膜の内部品位評価に大変有効であることが初めて実証された。 | |||||
書誌情報 |
AIP Conference Proceedings 巻 772, p. 281-282, 発行年 2005-06-30 |
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ISSN | ||||||
収録物識別子 | 0094243X | |||||
書誌レコードID | ||||||
収録物識別子 | AA00502977 | |||||
DOI | ||||||
関連タイプ | isIdenticalTo | |||||
関連識別子 | 10.1063/1.1994100 | |||||
権利 | ||||||
権利情報 | ©2005 American Institute of Physics | |||||
フォーマット | ||||||
内容記述 | application/pdf | |||||
形態 | ||||||
165026 bytes | ||||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
日本十進分類法 | ||||||
主題 | 549.8 | |||||
その他の言語のタイトル | ||||||
その他のタイトル | 金属有機化学気相堆積法でサファイア基板上に成長させたGaN薄膜の赤外評価 | |||||
タイトル(ヨミ) | ||||||
その他のタイトル | キンゾク ユウキ カガク キソウ タイセキホウ デ サファイア キバン ジョウ ニ セイチョウ サセタ GaN ハクマク ノ セキガイ ヒョウカ | |||||
出版者 | ||||||
出版者 | American Institute of Physics | |||||
資源タイプ | ||||||
内容記述 | 論文(Article) | |||||
資源タイプ・ローカル | ||||||
雑誌掲載論文 | ||||||
資源タイプ・NII | ||||||
Journal Article | ||||||
資源タイプ・DCMI | ||||||
text | ||||||
資源タイプ・ローカル表示コード | ||||||
01 | ||||||
URL | ||||||
内容記述 | http://link.aip.org/link/?APCPCS/772/281/1 | |||||
コメント | ||||||
黒田規敬: 熊本大学大学院自然科学研究科マテリアル工学講座・工学部マテリアル工学科 |