2026-03-07T06:29:52Z https://kumadai.repo.nii.ac.jp/oai

oai:kumadai.repo.nii.ac.jp:00030157 2023-09-14T23:52:43Z 448:449

Large As sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography Hosokawa, Shinya 155700 細川, 伸也 ホソカワ, シンヤ 林, 好一 127457 ハヤシ, コウイチ Hayashi, Kouichi Uchitomi, Naotaka 139360 Yamagami, Keitaro 139361 Suzuki, Akiko 139362 Yoshizawa, Hayato 139363 T. Asubar, Joel 139364 八方, 直久 127453 ハッポウ, ナオヒサ Happo, Naohisa Hosokawa, Shinya 139366 431.8 application/pdf 論文(Article) The structure of a ZnSnAs2 thin film epitaxially grown on an InP substrate was evaluated using x-ray fluorescence holography. The reconstructed three-dimensional atomic images clearly show that the crystal structure of the ZnSnAs2 thin film is mainly of the sphalerite type, in contrast to the bulk form. A large disordering of the As layers is observed, whereas the positions of the Zn/Sn atoms are relatively stable. The analysis of the data indicates that the As layers serve as a buffer and relax the strain caused by the random occupation of Zn and Sn atoms. These results provide further understanding and a means of controlling the growth of Mn-doped ZnSnAs2, a high-Tc diluted magnetic semiconductor. http://aip.scitation.org/doi/10.1063/1.4945004 journal article AIP Publishing 2016-03-30 VoR application/pdf Journal of Applied Physics 119 125703 https://kumadai.repo.nii.ac.jp/record/30157/files/JAP119_125703.pdf http://hdl.handle.net/2298/38161 https://kumadai.repo.nii.ac.jp/records/30157 eng © 2016 AIP Publishing LLC.