@article{oai:kumadai.repo.nii.ac.jp:00021727,
 author = {黒田, 規敬 and 上野, 修 and Ueno, Osamu and 仁科, 雄一郎 and Kuroda, Noritaka and 上野, 修 and Ueno, Osamu and 仁科, 雄一郎 and Nishina, Yuichiro},
 issue = {8},
 journal = {Physical Review B},
 month = {Mar},
 note = {application/pdf, 論文(Article), Raman scattering and infrared studies are reported for the layer compound GaSe under hydrostatic pressures up to 4 GPa. The rigid-layer mode shifts towards higher frequencies with an initial pressure coefficient of 0.234 GPa-1. The overall behavior is explained in terms of the volume anharmonicity characteristic of the van der Waals bonding. The internal bond-bending mode softens and the Born effective charge decreases linearly. By adopting the single-layer compressibility κl≃0.015 GPa-1 we obtain a Grüneisen parameter of -1.9 for the bond-bending mode and -0.55±0.05 for the effective charge, comparable to those of a tetrahedral semiconductor. Coexistence of such molecular and covalent characters leads to a nonlinear shift of the energy, Eg, of the Penn-Phillips oscillator. This behavior is shown to be described well by ΔEg=Da(Δa/a0) +Dc(Δc/c0) with the deformation potentials Da=-7.6±1.0 eV for the a axis and Dc=1.06±0.16 eV for the c axis. These deformation potentials reflect the dimensionality of bonding network as well as the nature of the electronic structure., 層状半導体の代表的な物質の１つとしてこれまで多くの関心を集めてきたGaSeについて、2次元的な化学結合の成り立ちと電子構造との関係を実験的に調べるために、ダイヤモンドアンビルセルを用いてラマン散乱スペクトルと光学屈折率の静水圧依存性を詳細に測定した。この実験によりGa-Se結合の有効電荷とs、p 価電子の結合-反結合エネルギーギャップの光学的平均値を定量評価することができ、それらの圧力係数を通して、化学結合ネットワークの2次元性についての描像が得られた。, http://link.aps.org/abstract/PRB/v35/p3860},
 pages = {3860--3870},
 title = {Lattice-dynamical and photoelastic properties of GaSe under high pressure studied by Raman scattering and electronic susceptibility},
 volume = {35},
 year = {1987},
 yomi = {ウエノ, オサム and ウエノ, オサム and ニシナ, ユウイチロウ}
}