{"created":"2023-06-19T09:10:15.250261+00:00","id":21748,"links":{},"metadata":{"_buckets":{"deposit":"7e0b61ea-9353-4a7d-b64e-bd850da5a902"},"_deposit":{"created_by":1,"id":"21748","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"21748"},"status":"published"},"_oai":{"id":"oai:kumadai.repo.nii.ac.jp:00021748","sets":["426:428"]},"author_link":["94144","94136","94135","94146","94138","94147","94148","166540","94145","94134"],"item_16_alternative_title_22":{"attribute_name":"その他の言語のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"金属有機化学気相堆積法でサファイア基板上に成長させたGaN薄膜の赤外評価"}]},"item_16_alternative_title_23":{"attribute_name":"タイトル（ヨミ）","attribute_value_mlt":[{"subitem_alternative_title":"キンゾク ユウキ カガク キソウ タイセキホウ デ サファイア キバン ジョウ ニ セイチョウ サセタ GaN ハクマク ノ セキガイ ヒョウカ"}]},"item_16_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2005-06-30","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"282","bibliographicPageStart":"281","bibliographicVolumeNumber":"772","bibliographic_titles":[{"bibliographic_title":"AIP Conference Proceedings"}]}]},"item_16_creator_3":{"attribute_name":"別言語の著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"黒田, 規敬"}],"nameIdentifiers":[{"nameIdentifier":"94144","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐伯, 和也"}],"nameIdentifiers":[{"nameIdentifier":"94145","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"渡邉, 純二"}],"nameIdentifiers":[{"nameIdentifier":"94146","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"曺, 明煥"}],"nameIdentifiers":[{"nameIdentifier":"94147","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"曹, 明煥"}],"nameIdentifiers":[{"nameIdentifier":"94148","nameIdentifierScheme":"WEKO"}]}]},"item_16_description_17":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_16_description_46":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"subitem_description":"論文(Article)","subitem_description_type":"Other"}]},"item_16_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Reststrahlen reflection and attenuated total reflection due to the surface phonon-polariton waves have been measured for 2 µm-thick films of n-GaN deposited on the (0001) surface of sapphire. It has emerged that the lattice of the top 1 µm-thick portion has a high quality while a large strain remains in the inner half of the films.","subitem_description_type":"Other"},{"subitem_description":"半導体薄膜内部の結晶品位を非破壊・非接触で評価する技術の開発を目的として、斜入射赤外反射の手法を青色発光ダイオードのためのn-GaN膜に適用し、併せて赤外減衰全反射により結果を検証した。試料には金属有機化学気相堆積法でサファイアの(0001)面上に2 ミクロンの厚さに堆積させた薄膜を用いた。得られた赤外フォノン残留線と表面フォノン波のスペクトルより、膜の上部1 ミクロンは良好な結晶品位を有するが下部の1 ミクロンにはサファイア基板との格子定数差による大きな歪みが残存していることが観測された。これにより、斜入射赤外反射が半導体極薄膜の内部品位評価に大変有効であることが初めて実証された。","subitem_description_type":"Other"}]},"item_16_description_77":{"attribute_name":"URL","attribute_value_mlt":[{"subitem_description":"http://link.aip.org/link/?APCPCS/772/281/1","subitem_description_type":"Other"}]},"item_16_publisher_36":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of 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