@article{oai:kumadai.repo.nii.ac.jp:00028052,
 author = {Hosokawa, Shinya and 細川, 伸也 and 八方, 直久 and Happo, Naohisa and 尾崎, 徹 and Ozaki,  Toru and 池本, 弘之 and Ikemoto,  Hiroyuki and 宍戸, 統悦 and Shishido,  Toetsu and 林,  好一 and Hayashi,  Kouichi and Hosokawa, Shinya and 八方, 直久 and Happo, Naohisa and 尾崎, 徹 and Ozaki,  Toru and 池本, 弘之 and Ikemoto,  Hiroyuki and 宍戸, 統悦 and Shishido,  Toetsu and 林,  好一 and Hayashi,  Kouichi},
 issue = {9},
 journal = {Physical Review B},
 month = {Mar},
 note = {application/pdf, 論文(Article), To clarify lattice distortions induced by adding Ga atoms in the InSb crystal, Ga Kα x-ray fluorescence holography (XFH) experiments were carried out on an In0.995Ga0.005Sb diluted mixed single crystal, and three-dimensional atomic images around the Ga atoms were reconstructed. Although the atomic images are located almost at ideal positions of the InSb crystal, some differences can be observed for only the first- and second-neighboring atoms. By combining them with x-ray absorption fine structure data, large spatial fluctuations of the first-neighboring atoms appear in the angular direction, which can be clarified from the present XFH results. From the XFH results, it is concluded that lattice distortions are limited within the second neighbors in this diluted mixed crystal, in contrast to five chemical bonds in a heavily doped mixed crystal of Zn0.4Mn0.6Te reported previously., http://prb.aps.org/abstract/PRB/v87/i9/e094104},
 pages = {094104-1--094104-8},
 title = {Extent and feature of lattice distortions around Ga impurity atoms in InSb single crystal},
 volume = {87},
 year = {2013},
 yomi = {ホソカワ, シンヤ and ハッポウ, ナオヒサ and オザキ,  トオル and イケモト,  ヒロユキ and シシド,  トウエツ and ハヤシ,  コウイチ and ハッポウ, ナオヒサ and オザキ,  トオル and イケモト,  ヒロユキ and シシド,  トウエツ and ハヤシ,  コウイチ}
}