@article{oai:kumadai.repo.nii.ac.jp:00030157,
 author = {Hosokawa, Shinya and 細川, 伸也 and 林,  好一 and Hayashi,  Kouichi and Uchitomi, Naotaka and Yamagami, Keitaro and Suzuki, Akiko and Yoshizawa, Hayato and T. Asubar, Joel and 八方, 直久 and Happo, Naohisa and Hosokawa, Shinya},
 journal = {Journal of Applied Physics},
 month = {Mar},
 note = {application/pdf, 論文(Article), The structure of a ZnSnAs2 thin film epitaxially grown on an InP substrate was evaluated using x-ray fluorescence holography. The reconstructed three-dimensional atomic images clearly show that the crystal structure of the ZnSnAs2 thin film is mainly of the sphalerite type, in contrast to the bulk form. A large disordering of the As layers is observed, whereas the positions of the Zn/Sn atoms are relatively stable. The analysis of the data indicates that the As layers serve as a buffer and relax the strain caused by the random occupation of Zn and Sn atoms. These results provide further understanding and a means of controlling the growth of Mn-doped ZnSnAs2, a high-Tc diluted magnetic semiconductor., http://aip.scitation.org/doi/10.1063/1.4945004},
 title = {Large As sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography},
 volume = {119},
 year = {2016},
 yomi = {ホソカワ, シンヤ and ハヤシ,  コウイチ and ハッポウ, ナオヒサ}
}