{"created":"2023-06-19T09:18:55.413525+00:00","id":32049,"links":{},"metadata":{"_buckets":{"deposit":"fe08805a-0d98-4a66-b7c7-ca1805d7259f"},"_deposit":{"created_by":12,"id":"32049","owners":[12],"pid":{"revision_id":0,"type":"depid","value":"32049"},"status":"published"},"_oai":{"id":"oai:kumadai.repo.nii.ac.jp:00032049","sets":["426:428"]},"author_link":["165546","165551","165552","165553","165821"],"control_number":"32049","item_16_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-06-28","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageStart":"70905","bibliographicVolumeNumber":"58","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics","bibliographic_titleLang":"en"}]}]},"item_16_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Tin dioxide (SnO2) thin films, as a candidate for realizing next-generation electrical and optical devices, were grown on 2-inch diameter m -plane sapphire substrates by mist chemical vapour deposition at atmospheric pressure. The SnO2 thin films were characterized by scanning electron microscope (SEM), atomic force microscope (AFM), X-ray diffraction (XRD) in θ–2θ and φ scanning modes, and electron backscatter diffraction (EBSD). Although the SEM and AFM images showed a relatively rough surface morphology, it was found from the XRD and EBSD measurements that SnO2 films were epitaxially grown on the substrates under optimised growth condition. Epitaxial growth of SnO2 thin film growth at three typical areas on the substrate was confirmed by the EBSD measurements. It is likely that the single crystalline SnO2 (001) thin film was formed across the 2-inch sapphire substrate. Finally, the second SnO2 layer was overgrown on the above single crystalline SnO2 thin film, which functioned as a buffer layer. This method which drastically improved surface roughness of the second SnO2 layer.","subitem_description_language":"en","subitem_description_type":"Abstract"}]},"item_16_publisher_36":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing","subitem_publisher_language":"en"}]},"item_16_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.7567/1347-4065/ab29e3","subitem_relation_type_select":"DOI"}}]},"item_16_relation_32":{"attribute_name":"論文ID（NAID）","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"120006951248","subitem_relation_type_select":"NAID"}}]},"item_16_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"(C) 2019 The Japan Society of Applied Physics","subitem_rights_language":"en"}]},"item_16_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"PISSN"}]},"item_16_subject_20":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"501","subitem_subject_scheme":"NDC"}]},"item_16_version_type_19":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yatabe, Zenji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"165546","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nishiyama, Koshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"165551","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tsuda, Takaaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"165552","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nishimura, Kazuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"165553","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakamura, Yusui","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"165821","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2021-02-18"}],"displaytype":"detail","filename":"2019_58_070905-1-4b.pdf","filesize":[{"value":"658.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"127_19017","url":"https://kumadai.repo.nii.ac.jp/record/32049/files/2019_58_070905-1-4b.pdf"},"version_id":"a1480f9a-c95e-4434-bd5f-3169e260b519"}]},"item_keyword":{"attribute_name":"キーワード","attribute_value_mlt":[{"subitem_subject":"General Engineering","subitem_subject_language":"en","subitem_subject_scheme":"Other"},{"subitem_subject":"General Physics and Astronomy","subitem_subject_language":"en","subitem_subject_scheme":"Other"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films","subitem_title_language":"en"}]},"item_type_id":"16","owner":"12","path":["428"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2021-01-08"},"publish_date":"2021-01-08","publish_status":"0","recid":"32049","relation_version_is_last":true,"title":["Synthesis and characterization of mist chemical vapor deposited aluminum titanium oxide films"],"weko_creator_id":"12","weko_shared_id":-1},"updated":"2024-01-16T00:38:59.562211+00:00"}