@article{oai:kumadai.repo.nii.ac.jp:00032442,
 author = {Low, Rui Shan and Joel T., Asubar and Baratov, Ali and Kamiya, Shunsuke and Nagase, Itsuki and Urano, Shun and Kawabata, Shinsaku and Tokuda, Hirokuni and Kuzuhara, Masaaki and Nakamura, Yusui and Naito, Kenta and Motoyama, Tomohiro and Zenji, Yatabe},
 issue = {3},
 journal = {Applied Physics Express},
 month = {Feb},
 note = {We report on the fabrication and characterization of AlGaN/GaN metal-insulator-semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a 5 nm thick Al2O3 dielectric deposited by cost-effective and environmental-friendly mist chemical vapor deposition (mist-CVD) technique. Practically hysteresis-free capacitance–voltage profiles were obtained from the fabricated two-terminal MIS-capacitors indicating high quality of the mist-Al2O3/AlGaN interface. Compared with reference Schottky-gate HEMTs, mist MIS-HEMTs exhibited much improved performance including higher drain current on-to-off ratio, much lower gate leakage current in both forward and reverse directions and lower subthreshold swing. These results demonstrate the potential and viability of non-vacuum mist-CVD Al2O3 in the development of high-performance GaN-based MIS-HEMTs.},
 title = {GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique},
 volume = {14},
 year = {2021}
}