{"created":"2023-06-19T09:19:11.438568+00:00","id":32442,"links":{},"metadata":{"_buckets":{"deposit":"66f0b7c5-1b9e-47e5-aeeb-5af091909759"},"_deposit":{"created_by":15,"id":"32442","owners":[15],"pid":{"revision_id":0,"type":"depid","value":"32442"},"status":"published"},"_oai":{"id":"oai:kumadai.repo.nii.ac.jp:00032442","sets":["426:428"]},"author_link":["166034","166035","166036","166037","166038","166039","166040","166041","166042","165821","166043","166044","165546"],"control_number":"32442","item_16_biblio_info_6":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-02-16","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageStart":"031004","bibliographicVolumeNumber":"14","bibliographic_titles":[{"bibliographic_title":"Applied Physics Express","bibliographic_titleLang":"en"}]}]},"item_16_description_5":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We report on the fabrication and characterization of AlGaN/GaN metal-insulator-semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a 5 nm thick Al2O3 dielectric deposited by cost-effective and environmental-friendly mist chemical vapor deposition (mist-CVD) technique. Practically hysteresis-free capacitance–voltage profiles were obtained from the fabricated two-terminal MIS-capacitors indicating high quality of the mist-Al2O3/AlGaN interface. Compared with reference Schottky-gate HEMTs, mist MIS-HEMTs exhibited much improved performance including higher drain current on-to-off ratio, much lower gate leakage current in both forward and reverse directions and lower subthreshold swing. These results demonstrate the potential and viability of non-vacuum mist-CVD Al2O3 in the development of high-performance GaN-based MIS-HEMTs.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_16_publisher_36":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing","subitem_publisher_language":"en"}]},"item_16_relation_11":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"https://doi.org/10.35848/1882-0786/abe19e","subitem_relation_type_select":"DOI"}}]},"item_16_rights_12":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2021 The Japan Society of Applied Physics","subitem_rights_language":"en"},{"subitem_rights":"Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.","subitem_rights_language":"en"}]},"item_16_source_id_7":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1882-0778","subitem_source_identifier_type":"PISSN"}]},"item_16_subject_20":{"attribute_name":"日本十進分類法","attribute_value_mlt":[{"subitem_subject":"501","subitem_subject_scheme":"NDC"}]},"item_16_version_type_19":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Low, Rui Shan","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"166034","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Joel T., Asubar","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"166035","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Baratov, Ali","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"166036","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kamiya, Shunsuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"166037","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nagase, Itsuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"166038","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Urano, Shun","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"166039","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawabata, Shinsaku","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"166040","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tokuda, Hirokuni","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"166041","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuzuhara, Masaaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"166042","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakamura, Yusui","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"165821","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Naito, Kenta","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"166043","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Motoyama, Tomohiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"166044","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Zenji, Yatabe","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"165546","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_access","displaytype":"detail","filename":"Low_2021_Appl._Phys._Express_14_031004.pdf","filesize":[{"value":"1.2 MB"}],"format":"application/pdf","licensetype":"license_0","mimetype":"application/pdf","url":{"url":"https://kumadai.repo.nii.ac.jp/record/32442/files/Low_2021_Appl._Phys._Express_14_031004.pdf"},"version_id":"9913642f-705c-4814-a200-4b956a3d16c5"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique","subitem_title_language":"en"}]},"item_type_id":"16","owner":"15","path":["428"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2021-10-06"},"publish_date":"2021-10-06","publish_status":"0","recid":"32442","relation_version_is_last":true,"title":["GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique"],"weko_creator_id":"15","weko_shared_id":-1},"updated":"2023-09-11T02:03:22.651114+00:00"}